Electron spectroscopy with a commercial 4H-SiC photodiode
نویسندگان
چکیده
منابع مشابه
Soft X-ray detection and photon counting spectroscopy with commercial 4H-SiC Schottky photodiodes
The results of electrical characterisation and X-ray detection measurements of two different active area (0.06 mm and 0.5 mm) commercial 4H-SiC Schottky photodiodes at room temperature are reported. The devices exhibited low dark currents (less than 10 pA) even at a high electric field strengths (403 kV/ cm for 0.06 mm diodes; 227 kV/cm for 0.5 mm diodes). The results of the X-ray measurements ...
متن کاملHot-Electron Transport and Microwave Noise in 4H–SiC
Hot-electron transport and microwave noise are investigated for n-type 4H–SiC (n = 2 × 10 cm−3) subjected to a pulsed electric field applied parallel to the basal plane. At room temperature, the negative differential conductance, masked by field ionization at the highest fields, is observed in the field range between 280 and 350 kV/cm. The threshold fields for the negative differential conducta...
متن کاملDemonstration of 4H-SiC UV single photon counting avalanche photodiode - Electronics Letters
Introduction: Single photon counting detectors enable the receiver of an optoelectronic system to achieve the ultimate receiver sensitivity, the quantum limit. They are also essential in applications that rely on the quantum nature of the light, such as quantum cryptography and quantum computing. Photomultiplier tubes (PMTs) are commonly used for single photon counting because of its high gain ...
متن کاملX-ray spectrometer with a low-cost SiC photodiode
A low-cost Commercial-Off-The-Shelf (COTS) 4H-SiC 0.06 mm2 UV p-n photodiode was coupled to a low-noise charge-sensitive preamplifier and used as photon counting X-ray spectrometer. The photodiode/spectrometer was investigated at X-ray energies from 4.95 keV to 21.17 keV: a Mo cathode X-ray tube was used to fluoresce eight high-purity metal foils to produce characteristic X-ray emission lines w...
متن کاملCVD growth of 3C-SiC on 4H-SiC substrate
The hetero epitaxial growth of 3C-SiC on nominally on-axis 4H-SiC is reported. A horizontal hot-wall CVD reactor working at low pressure is used to perform the growth experiments in a temperature range of 1200-1500 °C with the standard chemistry using silane and propane as precursors carried by a mix of hydrogen and argon. The optimal temperature for single-domain growth is found to be about 13...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
سال: 2018
ISSN: 0168-9002
DOI: 10.1016/j.nima.2018.09.017